Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors-Reference-Cited by-同舟云学术

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Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors

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Container-title:Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)
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Author:

Manzini S.,Gallerano A.,Contiero C.

Publisher

Inst. Electr. Eng. Japan

Link

http://xplorestaging.ieee.org/ielx4/5675/15198/00702734.pdf?arnumber=702734

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Voltage PDMOS Device Design Against Breakdown Voltage Walk-In;IEEE Transactions on Electron Devices;2023-04

2. Hot Carrier Injection Effects in the Ultrashallow Body SONOS Gate Power MOSFET;IEEE Transactions on Electron Devices;2013-06

3. Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors;IET Circuits, Devices & Systems;2008

4. Characterization of Total Safe Operating Area of Lateral DMOS Transistors;IEEE Transactions on Device and Materials Reliability;2006-09

5. Integrating power devices into silicon roadmaps;IEE Proceedings - Circuits, Devices and Systems;2006

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