A Floating-Body Transistor-Based Power Amplifier for Sub-6-GHz 5G Applications in SOI CMOS 130-nm Process-Reference-Cited by-同舟云学术

A Floating-Body Transistor-Based Power Amplifier for Sub-6-GHz 5G Applications in SOI CMOS 130-nm Process

Published:2022-10 Issue:10 Volume:69 Page:4088-4092
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Guo Ting¹^ORCID,Lu Zhongzhiguang¹,Tang Kai¹^ORCID,Yang Chuanshi¹^ORCID,Yu Bo²^ORCID,Zheng Yuanjin¹^ORCID

Affiliation:

1. Centre of Integrated Circuits and System, School of Electrical and Electronic Engineering, Nanyang Technological University, Jurong West, Singapore

2. Department of Technology Development, Globalfoundries Singapore, 60 Woodlands Industrial Park D St 2, Singapore

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/9900496/09815088.pdf?arnumber=9815088

Reference19 articles.

1. Optimized DPD Feedback Loop for m-MIMO sub-6GHz Systems

2. Polar Antenna Impedance Detection and Tuning for Efficiency Improvement in a 3G/4G CMOS Power Amplifier

3. A 3.7GHz 130nm CMOS-SOI class E RF power amplifier

4. High-Power High-Efficiency Class-E-Like Stacked mmWave PAs in SOI and Bulk CMOS: Theory and Implementation

5. A 12.7dBm IIP3, 1.34dB NF, 4.9GHz–5.9GHz 802.11a/n LNA in 0.13 $\mu\text{m}$ PD-SOI CMOS with body-contacted transistor;paulin;IEEE MTT-S Int Microw Symp Tech Dig,0

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