A 0.5V 22.5ppm/°C Bandgap Voltage Reference With Leakage Current Injection for Curvature Correction
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, State Key Laboratory of Analog and Mixed-Signal VLSI, the Institute of Microelectronics, Faculty of Science and Technology, University of Macau, Macau, China
Funder
Science and Technology Development Fund, Macau SAR
University of Macau
Shenzhen Science and Technology Innovation Commission
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/10262390/10182317.pdf?arnumber=10182317
Reference18 articles.
1. A 1.2-V 4.2- $\hbox{ppm}/^{\circ}\hbox{C}$ High-Order Curvature-Compensated CMOS Bandgap Reference
2. A Sub-$\mu{\rm W}$ Bandgap Reference Circuit With an Inherent Curvature-Compensation Property
3. A Sub-1 ppm/°C Precision Bandgap Reference With Adjusted-Temperature-Curvature Compensation
4. A 5.6 ppm/°C Temperature Coefficient, 87-dB PSRR, Sub-1-V Voltage Reference in 65-nm CMOS Exploiting the Zero-Temperature-Coefficient Point
5. A 2-V 23-μA 5.3-ppm/°C curvature-compensated CMOS bandgap voltage reference
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference;Microelectronics Journal;2024-10
2. 0.4-V Supply, 12-nW Reverse Bandgap Voltage Reference With Single BJT and Indirect Curvature Compensation;IEEE Transactions on Circuits and Systems I: Regular Papers;2024
3. An 1 V Supply, 740 nW, 8.7 ppm/°C Bandgap Voltage Reference With Segmented Curvature Compensation;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-12
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