0.52-mW 30-GHz LNA in 22-nm FDSOI CMOS-Reference-Cited by-同舟云学术

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0.52-mW 30-GHz LNA in 22-nm FDSOI CMOS

Published:2023-10 Issue:10 Volume:70 Page:3752-3756
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Spasaro Michele¹^ORCID,Zito Domenico¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Aarhus University, Aarhus, Denmark

Funder

European Commission through the European H2020 FET OPEN Project IQubits

Poul Due Jensen Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/10262390/10160096.pdf?arnumber=10160096

Reference28 articles.

1. A 24-43 GHz LNA with 3.1-3.7 dB Noise Figure and Embedded 3-Pole Elliptic High-Pass Response for 5G Applications in 22 nm FDSOI

2. A 917-?W Q-band transformer-feedback current-reused LNA using 90-nm CMOS technology;huang;IEEE/MTT-S Int Microw Symp Dig,2012

3. Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)

4. A Compact, Low-Power, Low-NF, Millimeter-Wave Cascode LNA With Magnetic Coupling Feedback in 22-nm FD-SOI CMOS for 5G Applications

5. Design of Low-Power Sub-2.4 dB Mean NF 5G LNAs Using Forward Body Bias in 22 nm FDSOI

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