Design of a Low-Power and Area-Efficient LDO Regulator Using a Negative-R-Assisted Technique
Author:
Affiliation:
1. Department of Electrical Engineering, Hanyang University, Ansan, South Korea
2. Department of Electrical Engineering, Institute of Space Technology, Islamabad, Pakistan
Funder
Technology Innovation Program (Development of Ultra-Low-Power High-Resolution Analog IP Module for Healthcare Sensors) funded by the Ministry of Trade, Industry Energy (MOTIE), South Korea
Korea Evaluation Institute of Industrial Technology (KEIT) Grant funded by the Korean Government
National Research Foundation of Korea (NRF) Grant funded by the Korea Government
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/10262390/10163905.pdf?arnumber=10163905
Reference15 articles.
1. A 55 W 93.1dB-DR 20kHz-BW single-bit CT modulator with negative R-assisted integrator achieving 178.7dB FoM in 65nm CMOS;jang;Proc IEEE Symp VLSI Circuits,2017
2. 300 mA LDO Using 0.94 μA IQ With an Additional Feedback Path for Buffer Turn-off Under Light-Load Conditions
3. Design of a Low-Voltage Low-Dropout Regulator
4. Area-efficient linear regulator with ultra-fast load regulation
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