CMOS Power Amplifier With Novel Transformer Power Combiner
Author:
Affiliation:
1. Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan
Funder
National Science Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/10164655/10024830.pdf?arnumber=10024830
Reference15 articles.
1. 2.4 A 2.4V 23.9dBm 35%-PAE ?32.1dBc-ACLR LTE-20MHz envelope-shaping-and-tracking system with a multiloop-controlled AC-coupling supply modulator and a mode-switching PA;liu;Proc IEEE Int Solid-State Circuits Conf (ISSCC),2017
2. 3.2 A 1.95GHz fully integrated envelope elimination and restoration CMOS power amplifier with envelope/phase generator and timing aligner for WCDMA and LTE;oishi;IEEE Int Solid-State Circuits Conf Dig Techn Papers (ISSCC),2014
3. 2.3-GHz HBT Power Amplifier With Parallel-Segmented On-Chip Autotransformer
4. A 1.7-to-2.7GHz 35–38% PAE Multiband CMOS Power Amplifier Employing a Digitally-Assisted Analog Pre-Distorter (DAAPD) Reconfigurable Linearization Technique
5. High Power Amplifier Based on a Transformer-Type Power Combiner in CMOS Technology
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