Ultra-Low Noise Amplifier for X-Band SiGe BiCMOS Phased Array Applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/8815903/08605384.pdf?arnumber=8605384
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Ku-band LNA with 39.2 dB gain, 1.4 dB NF and shunt inductor-based matching network;Engineering Research Express;2023-09-01
2. Linear-to-Circular Polarization Converter With Wide Angular Stability and Near Unity Ellipticity—Application to Linearly Polarized Antenna Array;IEEE Transactions on Circuits and Systems II: Express Briefs;2022-12
3. Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure;International Journal of RF and Microwave Computer-Aided Engineering;2022-09-06
4. A Compact C-band EPR-on-a-chip Transceiver in 130-nm SiGe BiCMOS;2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2022-06-12
5. Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology forX‐band applications;International Journal of Circuit Theory and Applications;2022-04-19
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