An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P1dB-Reference-Cited by-同舟云学术

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An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P1dB

Published:2018-08 Issue:8 Volume:65 Page:994-998
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Davulcu Murat,Caliskan Can,Kalyoncu Ilker,Gurbuz Yasar

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/8423543/08277178.pdf?arnumber=8277178

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HBT Modeling and X-Band Differential LNA Design with 0.25 µm SiGe-C BiCMOS Process;2023 22nd Mediterranean Microwave Symposium (MMS);2023-10-30

2. Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above f_max/2in Sub-THz/THz Frequencies;IEEE Journal of Solid-State Circuits;2023-09

3. A Ku-band LNA with 39.2 dB gain, 1.4 dB NF and shunt inductor-based matching network;Engineering Research Express;2023-09-01

4. Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking;Sensors;2023-07-28

5. A Compact 1.0–12.5-GHz LNA MMIC With 1.5-dB NF Based on Multiple Resistive Feedback in 0.15-μm GaAs pHEMT Technology;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-04

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