Design of a Dual-Band Outphasing Power Amplifier Based on Multiple Topology Fitting-Reference-Cited by-同舟云学术

Design of a Dual-Band Outphasing Power Amplifier Based on Multiple Topology Fitting

Published:2024-06 Issue:6 Volume:71 Page:3011-3015
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Huang Jiayu¹^ORCID,Wang Weiwei²^ORCID,Xu Kuiwen¹^ORCID,Cai Jialin¹^ORCID,Pang Jingzhou³^ORCID,Crupi Giovanni⁴^ORCID,Wang Gaofeng¹^ORCID,Chen Shichang¹^ORCID

Affiliation:

1. Shaoxing Integrated Circuit Institute, Hangzhou Dianzi University, Hangzhou, China

2. School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China

3. School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China

4. BIOMORF Department, University of Messina, Messina, Italy

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Zhejiang Provincial Natural Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/8920/10561573/10399949.pdf?arnumber=10399949

Reference12 articles.

1. A concurrent 2.15/3.4 GHz dual-band Doherty power amplifier with extended fractional bandwidth

2. Ultra-Wideband Dual-Mode Doherty Power Amplifier Using Reciprocal Gate Bias for 5G Applications

3. A Dual-band Outphasing Power Amplifier

4. A Broadband Outphasing GaN Power Amplifier Based on Reconfigurable Output Combiner

5. Design of Dual-Band Chireix Outphasing Power Amplifier

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