A 12.87-dB Gain 10.5-dBm OP<sub>ldB</sub>60-to-66-GHz LNA in 0.15-μm GaAs pHEMT Technology-Reference-Cited by-同舟云学术

A 12.87-dB Gain 10.5-dBm OP_ldB60-to-66-GHz LNA in 0.15-μm GaAs pHEMT Technology

Published:2022-11-11 Issue: Volume: Page:
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Container-title:2022 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)
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Author:

Li Xuefeng¹,Wang Yuting¹,Wu Tianxiang¹,Chen Yong²,Ren Junyan¹,Ma Shunli¹

Affiliation:

1. School of Microelectronics Fudan University,State Key Laboratory of ASIC and System,Shanghai,China

2. University of Macau,State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST,Macao,China

Funder

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10103932/10103801/10103971.pdf?arnumber=10103971

Reference11 articles.

1. A 0.096-mm$^{2}~1$ –20-GHz Triple-Path Noise- Canceling Common-Gate Common-Source LNA With Dual Complementary pMOS–nMOS Configuration

2. Broadband millimeter-wave LNAs (47–77 GHz and 70–140 GHz) using a T-Type matching topology;liu;IEEE JSSC,2013

3. The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects;alamo;2011 International Conference on Compound Semiconductor Manufacturing Technology,2011

4. A 10‐MHz to 50‐GHz low‐jitter multiphase clock generator for high‐speed oscilloscope in 0.15‐μm GaAs technology

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