Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate
Author:
Affiliation:
1. Xidian University,National Key Discipline Laboratory of Wide Band-gap Semiconductor,Xi’an,China
2. Jiangnan University,Engineering Research Center of Internet of Things Technology Applications (Ministry of Education),Wuxi,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10221568/10221569/10221606.pdf?arnumber=10221606
Reference8 articles.
1. Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure
2. Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer
3. 1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability
4. Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors
5. Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process
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