Generic Memory Modeling with Recurrent Neural Network-Reference-Cited by-同舟云学术

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Generic Memory Modeling with Recurrent Neural Network

Published:2023-05-12 Issue: Volume: Page:
ISSN:
Container-title:2022 10th International Symposium on Next-Generation Electronics (ISNE)
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Author:

Rong Zhao¹,Zhang Lining²,Chan Mansun¹

Affiliation:

1. Hong Kong University of Science and Technology,AI Chip Center for Emerging Smart Systems, InnoHK Centers, HKSP,Department of ECE,Hong Kong,China

2. Peking University Shenzhen Graduate School,School of Electronic and Computer Engineering,Shenzhen,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10221568/10221569/10221590.pdf?arnumber=10221590

Reference9 articles.

1. Artificial neural network design for compact modeling of generic transistors

2. Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

3. Mathematical modeling of a memristor device

4. Memristor modeling: challenges in theories, simulations, and device variability

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