A Modified Zener Diode-Triggered Silicon Controlled Rectifier Used for 5V Application in 0.18um BCD Process-Reference-Cited by-同舟云学术

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A Modified Zener Diode-Triggered Silicon Controlled Rectifier Used for 5V Application in 0.18um BCD Process

Published:2023-05-12 Issue: Volume: Page:
ISSN:
Container-title:2022 10th International Symposium on Next-Generation Electronics (ISNE)
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Author:

Wang Songyan¹,Zhu Zhihua²,Feng Xikun³,Liang Rui⁴,Liu Hechao²,Xu Lei²,Yang Dapeng²,Bai Mengqi²,Xing Huiying²

Affiliation:

1. Zhengzhou University,National Center for International Joint Research of Electronic Materials and Systems,Zhengzhou,China

2. North China University of Water Resources and Electric Power,School of Electronic Engineering,Zhengzhou,China

3. Jiangnan University,School of Internet Engineering,Wuxi,China

4. AWINIC,Shanghai,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10221568/10221569/10221674.pdf?arnumber=10221674

Reference10 articles.

1. Design of A Novel Low Voltage Triggered Silicon Controlled Rectifier (SCR) for ESD Applications

2. Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection

3. A Modified LDMOS-SCR with High Holding Voltage for high voltage ESD Protection

4. ESD Robust Fully Salicided 5-V Integrated Power MOSFET in Submicron CMOS

5. Input ESD protection circuit design with special considerations for gate oxide protection in nanoscale technologies;lu;2014 IEEE International Conference on Electron Devices and Solid-State Circuits,2014

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