NS3K: A 3nm Nanosheet FET Library for VLSI Prediction in Advanced Nodes

Author:

Kim Taehak,Jeong Jaehoon,Woo Seungmin,Yang Jeonggyu,Kim Hyunwoo,Nam Ahyeon,Lee Changdong,Seo Jinmin,Kim Minji,Ryu Siwon,Oh Yoonju,Song Taigon

Publisher

IEEE

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. FS2K: A Forksheet FET Technology Library and a Study of VLSI Prediction for 2nm and Beyond;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

2. High-throughput PIM (Processing in-Memory) for DRAM using Bank-level Pipelined Architecture;2023 20th International SoC Design Conference (ISOCC);2023-10-25

3. Exploring Performance and Reliability Behavior of Nanosheet Channel Thin-Film Transistors under Independent Dual Gate Bias Operation;ECS Journal of Solid State Science and Technology;2023-10-01

4. Cache Register Sharing Structure for Channel-level Near-memory Processing in NAND Flash Memory;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05

5. HFGCN: High-speed and Fully-optimized GCN Accelerator;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05

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