Effects of Shallow Carbon and Deep N++ Layer on the Radiation Hardness of IHEP-IME LGAD Sensors

Author:

Li Mengzhao1ORCID,Fan Yunyun1ORCID,Jia Xuewei1ORCID,Cui Han1,Liang Zhijun1,Zhao Mei1,Yang Tao1,Wu Kewei1,Li Shuqi1,Yu Chengjun1,Liu Bo1,Wang Wei1ORCID,Yang Xuan1,Tan Yuhang1,Shi Xin1ORCID,da Costa Joao Guimaraes1ORCID,Heng Yuekun1,Xu Gaobo2ORCID,Zhai Qionghua2,Yan Gangping2ORCID,Ding Mingzheng2,Luo Jun2ORCID,Yin Huaxiang2ORCID,Li Junfeng2,Howard Alissa3,Kramberger Gregor3ORCID

Affiliation:

1. Chinese Academy of Sciences, Institute of High Energy Physics, Beijing, China

2. Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China

3. Jozef Stefan Institute, Ljubljana, Slovenia

Funder

National Natural Science Foundation of China

Hundred Talent Program of the Chinese Academy of Sciences

China Postdoctoral Science Foundation

CAS Center for Excellence in Particle Physics

Scientific Instrument Developing Project of the Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Silicon Radiation Detector Technologies: From Planar to 3D;Chips;2023-04-13

2. Design and testing of LGAD sensor with shallow carbon implantation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-01

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