Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation-Reference-Cited by-同舟云学术

Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

Author:

Roed Ketil¹^ORCID,Eriksen Dag Oistein²,Ceccaroli Bruno²,Martinella Corinna³^ORCID,Javanainen Arto³^ORCID,Reshanov Sergey⁴,Massetti Silvia⁵

Affiliation:

1. Department of Physics, University of Oslo, Oslo, Norway

2. Isosilicon AS, Kristiansand, Norway

3. Department of Physics, University of Jyväskylä, Jyväskylä, Finland

4. II-VI Kista AB (former Ascatron AB), Kista, Sweden

5. ESA-ESTEC, Noordwijk, The Netherlands

Funder

General Support Technology Programme (GSTP) European Space Agency

Optimal SIC Substrate for Integrated Microwave and Power Circuits (OSIRIS) Project

Electronic Component Systems for European Leadership Joint Undertaking

European Union’s Horizon 2020 Research and Innovation Program and the Project Participant’s National States

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

Reference22 articles.

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