High-Performance ISFET pH Sensor with HfO2Sensing Film Using Post-CMOS Processing
Author:
Affiliation:
1. Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences,Department of Micro- and Nanoelectronics and Biosensorics,Moscow,Russia
Funder
Russian Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10158505/10158506/10158889.pdf?arnumber=10158889
Reference9 articles.
1. Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements
2. Metal oxides based electrochemical pH sensors: Current progress and future perspectives
3. Methods of isfet fabrication;tadayuki;Sens Actuators,1981
4. Fabrication and package of ISFET biosensor for micro volume analysis with the use of direct ink writing approach
5. ISFETs in CMOS and Emergent Trends in Instrumentation: A Review
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