Amorphous metallic thin films as copper diffusion barrier for advanced interconnect applications-Reference-Cited by-同舟云学术

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Amorphous metallic thin films as copper diffusion barrier for advanced interconnect applications

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 11th Electronics Packaging Technology Conference
language:
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Author:

Yan H.¹,Tay Y. Y.¹,Liang M. H.¹,Chen Z.¹,Ng C. M.²,Pan J. S.³,Xu H.⁴,Liu C.⁴,Silberschmidt V. V.⁴

Affiliation:

1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

2. Chartered Semiconductor Manufacturing Ltd, Singapore 738406

3. Institute of Material Research & Engineering, A*STAR, 3 Research Link, Singapore 117602

4. Wolfson School of Mechanical and Manufacturing Engineering, Loughborough University, Loughborough, LE11 3TU, UK

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5398729/5416395/05416485.pdf?arnumber=5416485

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Influence of Magnetron Sputtering Conditions on the Structure of Zr–Pd Coatings;Technical Physics Letters;2020-07

2. Improving the barrier ability of Ti in Cu through-silicon vias through vacuum annealing;Japanese Journal of Applied Physics;2017-03-27

3. Mechanical Reliability Analysis and Optimization for 3D ICs;Design for High Performance, Low Power, and Reliable 3D Integrated Circuits;2012-09-24

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