BEOL-Compatible, ALD-grown In<sub>2</sub>O<sub>3</sub> Top-Gate FETs with Maximum Drain Current of 3 A/mm through Thermal Engineering and Pulse Measurement-Reference-Cited by-同舟云学术

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BEOL-Compatible, ALD-grown In₂O₃ Top-Gate FETs with Maximum Drain Current of 3 A/mm through Thermal Engineering and Pulse Measurement

Published:2022-04-18 Issue: Volume: Page:
ISSN:
Container-title:2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
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Author:

Liao Pai-Ying¹,Si Mengwei¹,Zhang Zhuocheng¹,Lin Zehao¹,Ye Peide. D.¹

Affiliation:

1. Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9770952/9770961/09770979.pdf?arnumber=9770979

Reference9 articles.

1. Nanometre-thin indium tin oxide for advanced high-performance electronics

2. Thermal Conductivity of Silicon from 300 to 1400°K

3. Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reversible Charge Transfer Doping in Atomically Thin In₂O₃ by Viologens;ACS Applied Materials & Interfaces;2023-12-29

2. A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current;IEEE Electron Device Letters;2022-11

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