Attainment of nearly thermally limited subthreshold slope in GaAs MOSFETs with in-situ Y<sub>2</sub>O<sub>3</sub>gate dielectric for cryogenic electronics-Reference-Cited by-同舟云学术

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Attainment of nearly thermally limited subthreshold slope in GaAs MOSFETs with in-situ Y₂O₃gate dielectric for cryogenic electronics

Published:2023-04-17 Issue: Volume: Page:
ISSN:
Container-title:2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
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Author:

Young L. B.¹,Liu J.²,Lin Y.-H. G.¹,Wan H.-W.¹,Cheng Y.-T.¹,Kwo J.³,Hong M.¹

Affiliation:

1. Grad. Inst. of Appl. Phys., National Taiwan University,Dept. of Phys.,Taipei,Taiwan,10617

2. Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan,10617

3. National Tsing Hua University,Department of Physics,Hsinchu,Taiwan,30013

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10133934/10133941/10134031.pdf?arnumber=10134031

Reference10 articles.

1. Verification of influence of tail states and interface states on sub-threshold swing of Si n-channel MOSFETs over a temperature range of 4K to 300K

2. Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric

3. InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers

4. High frequency modulation doped field effect transistors in InAlAs/InGaAs/InP material system;aksum;Technical Digest IEEE International Electron Devices Meeting,1986

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