Intrinsically Secure Non-Volatile Memory Using ReRAM Devices-Reference-Cited by-同舟云学术

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

Published:2022 Issue: Volume:10 Page:104577-104588
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Huan Junjun¹^ORCID,Olexa Nicholas²,Hochman Brett²,Bhunia Swarup¹^ORCID,Jha Rashmi²^ORCID,Mandal Soumyajit³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, USA

2. Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH, USA

3. Instrumentation Division, Brookhaven National Laboratory, Upton, NY, USA

Funder

National Science Foundation (NSF) Center for Hardware and Embedded System Security and Trust (CHEST)/Industry-University Cooperative Research Centers Program (IUCRC) at the University of Cincinnati

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

https://ieeexplore.ieee.org/ielam/6287639/9668973/9900346-aam.pdf

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4. 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation;govoreanu;IEDM Tech Dig,2011

5. Reflection coefficient of HfO2-based RRAM in different resistance states

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