Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

Author:

Cho Min SuORCID,Seo Jae Hwa,Lee Sang HoORCID,Jang Hwan Soo,Kang In ManORCID

Funder

National Research Foundation of Korea (NRF) funded by the Korea Government Ministry of Science and ICT

Samsung Electronics Company Ltd

BK21 Plus Project funded by the Ministry of Education, South Korea

Ministry of Trade, Industry, and Energy

Korea Semiconductor Research Consortium (KSRC) Support Program for developing the future semiconductor devices

NRF funded by the Korean Government, through the Global Ph.D. Fellowship Program

IC Design Education Center (IDEC), South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Verilog-A Based ANN Large Signal Modeling of Gan Hemts;2024 6th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE);2024-02-29

2. Behavioral-level modelling of GaN HEMT large signal based on Pelican-Gaussian process regression algorithm;Microelectronics Journal;2024-01

3. Comparative analysis of nonlinear behavioral models for GaN HEMTs based on machine learning techniques;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-09-29

4. Dependence of Device Performances on Fin Ratios of AlGaN/GaN Nanoscale Fin-HEMTs;ECS Journal of Solid State Science and Technology;2023-09-01

5. Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length;ECS Journal of Solid State Science and Technology;2023-03-01

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