Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling-Reference-Cited by-同舟云学术

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Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling

Published:2020 Issue: Volume:8 Page:178976-178990
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Alimenti Federico^ORCID,Simoncini Guendalina^ORCID,Brozzetti Gianluca,Maistro Daniele Dal,Tiebout Marc

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Link

http://xplorestaging.ieee.org/ielx7/6287639/8948470/09207893.pdf?arnumber=9207893

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fully Integrated Avalanche Noise Sources: Reproducibility and Stability Assessment;IEEE Microwave and Wireless Technology Letters;2023-11

2. Fully Integrated Built-In Self Test of Millimeter-Wave LNA based on Avalanche Noise Diodes in 130 nm SiGe BiCMOS Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. A Novel Microwave Noise Generator Using Multiple Zener Diodes Connected in Series;IEEE Microwave and Wireless Technology Letters;2023-09

4. Simulation of Built-In Test Equipments based on Avalanche Noise Diodes: Ka-band LNA Case Study;2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems;2023-01-22

5. CAD Modeling of mm-Wave Circuits Incorporating Avalanche Noise Diodes;2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2022-10-24

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