Capturing Layout Dependent Effects in MOSFET Circuit Sizing Using Precomputed Lookup Tables-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Capturing Layout Dependent Effects in MOSFET Circuit Sizing Using Precomputed Lookup Tables

Published:2023 Issue: Volume:11 Page:41205-41217
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Mohamed Karimeldeen¹^ORCID,Yasseen Khaled Y.²,Murmann Boris³^ORCID,Omran Hesham²^ORCID

Affiliation:

1. Department of Electrical Engineering, Suez Canal University, Ismailia, Egypt

2. Integrated Circuits Laboratory (ICL), Faculty of Engineering, Ain Shams University, Cairo, Egypt

3. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

Funder

Egypt’s Information Technology Industry Development Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10107639.pdf?arnumber=10107639

Reference18 articles.

1. Systematic circuit design and analysis using generalised g m / I D functions of MOS devices

2. Evidence of Limitations of the Transconductance-to-Drain-Current Method (gm/Id) for Transistor Sizing in 28 nm UTBB FD-SOI Transistors

3. CMOS op-amp circuit synthesis with geometric programming models for layout-dependent effects

4. Implications of Small Geometry Effects on $g_m/I_D$ Based Design Methodology for Analog Circuits

5. Narrow-width effect on high-frequency performance and RF noise of sub-40-nm multifinger nMOSFETs and pMOSFETs;yeh;IEEE Trans Electron Devices,2013

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two gm/ID design approaches for high-performance dual-resistive feedback noise-cancelling LNA;International Journal of Electronics;2024-07-28

2. gm/ID methodology applied to ring oscillators;Integration;2024-07

3. A Complete Automated Analog Flow from Design Generation to Post-layout Verification;2023 11th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC);2023-12-18

4. Assessment of the Zero Distortion Bias Point Using Design-Oriented 7-Parameter MOSFET Model;2023 7th International Young Engineers Forum (YEF-ECE);2023-07-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3