Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications-Reference-Cited by-同舟云学术

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Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications

Published:2020 Issue: Volume:8 Page:116117-116131
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Escudero Manuel^ORCID,Kutschak Matteo-Alessandro,Fontana Nico,Rodriguez Noel,Morales Diego Pedro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Link

http://xplorestaging.ieee.org/ielx7/6287639/8948470/09129883.pdf?arnumber=9129883

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ZVS Design in Full-SiC Three-Level Neutral-Point-Clamped DC–DC Converter Considering Quasi-Linear Output Capacitance $C_{oss}$;IEEE Transactions on Industrial Electronics;2023-09

2. Study on the C _OSS Dynamic Loss of Superjunction MOSFETs in Quasi-Resonant Flyback Converters;IEEE Transactions on Electron Devices;2023-08

3. Time Domain Modeling of Zero Voltage Switching behavior considering Parasitic Capacitances for a Dual Active Bridge;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

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