Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
2. Instrumental Analysis Center, Xi’an University of Architecture and Technology, Xi’an, China
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities of China
China National Postdoctoral Program for Innovative Talents
China Post-Doctoral Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9926983/09915463.pdf?arnumber=9915463
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2. High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment;IEEE Electron Device Letters;2024-06
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