MOSFET-Based Memristor for High-Frequency Signal Processing-Reference-Cited by-同舟云学术

MOSFET-Based Memristor for High-Frequency Signal Processing

Published:2022-05 Issue:5 Volume:69 Page:2248-2255
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ghosh Mourina¹^ORCID,Singh Ankur¹^ORCID,Borah Shekhar S.¹^ORCID,Vista John²^ORCID,Ranjan Ashish²^ORCID,Kumar Santosh³^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Indian Institute of Information Technology at Guwahati, Guwahati, Assam, India

2. Department of Electronics and Communication Engineering, National Institute of Technology Manipur, Imphal, India

3. Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09745268.pdf?arnumber=9745268

Reference44 articles.

1. Memristor emulator circuits using single CBTA

2. Memristor emulator with tunable characteristic and its experimental results

3. Simple MOS-based circuit designed to show pinched hysteresis behavior

4. A new grounded memristor emulator based on MOSFET-C

5. Tunable flux‐controlled floating memristor emulator circuits

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