Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
Author:
Affiliation:
1. IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9967813/09931332.pdf?arnumber=9931332
Reference7 articles.
1. BEOL compatible high retention perpendicular SOT-MRAM device for SRAM replacement and machine learning;couet;Proc VLSI Technology Symp Workshop,2021
2. SOT-MRAM based analog in-memory computing forDNN inference;doevenspeck;Proc Symp VLSI Circuits,2020
3. STT-MRAM with double magnetic tunnel junctions
4. Manufacturable 300 mm platform solution for field-free switching SOT-MRAM;garello;Proc Symp VLSI Circuits,2019
5. 2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction
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1. Micromagnetic modeling of double spin-torque magnetic tunnel junction devices;Physica B: Condensed Matter;2024-09
2. Energy landscape of noncollinear exchange coupled magnetic multilayers;Physical Review B;2024-06-17
3. Ultrafast Inertia-Free Switching of Double Magnetic Tunnel Junctions;IEEE Transactions on Magnetics;2024-05
4. Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature;Science Advances;2024-03-15
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