Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer-Reference-Cited by-同舟云学术

Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer

Published:2022-03 Issue:3 Volume:69 Page:1123-1128
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ke Shaoying¹^ORCID,Xiao Xiaoting¹,Jiao Jinlong²,Chen Xiaoqiang²,Huang Zhiwei¹,Zhou Jinrong¹^ORCID,Chen Songyan²

Affiliation:

1. College of Physics and Information Engineering, Minnan Normal University, Zhangzhou, China

2. Department of Physics, Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Natural Science Foundation of Zhangzhou

Natural Science Foundation of Jiangxi Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09697064.pdf?arnumber=9697064

Reference37 articles.

1. Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher

2. Analysis and Simulation of Semiconductor Devices

3. Self-consistent model of minority-carrier lifetime, diffusion length, and mobility

4. Carrier mobilities in silicon empirically related to doping and field;thomas;Proc IEEE,1967

5. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product

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