A Novel GaN-Based Metal-2DEG-Metal Varactor With Cutoff Frequency of 3.13 THz-Reference-Cited by-同舟云学术

A Novel GaN-Based Metal-2DEG-Metal Varactor With Cutoff Frequency of 3.13 THz

Published:2022-05 Issue:5 Volume:69 Page:2270-2274
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Weiguang¹^ORCID,Li Qian¹,An Ning¹^ORCID,Zeng Jianping¹^ORCID

Affiliation:

1. Microsystem and Terahertz Research Center, China Academy of Engineering Physics (CAEP), Chengdu, China

Funder

National Natural Science Foundation of China

Science Challenge Project of under Grant

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09733167.pdf?arnumber=9733167

Reference22 articles.

1. Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications;pampori;Proc IEEE 2nd Electron Devices Technol Manuf Conf (EDTM),2018

2. Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

3. Metal-Semiconductor-Metal (MSM) Varactor Based on AlGaN/GaN Heterostructure with Cutoff Frequency of 914.5GHz for Terahertz Frequency Multiplication

4. MSM Varactor Diodes Based on ${\rm In}_{0.7}{\rm Ga}_{0.3}{\rm As}$ HEMTs With Cut-Off Frequency of 908 GHz

5. Metal-Semiconductor–Metal Varactors Based on InAlN/GaN Heterostructure With Cutoff Frequency of 308 GHz

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