Current Gain Reduction in Bipolar Junction Transistors Induced by Carbon Contamination from H<sub>3</sub>PO<sub>4</sub>-Based Etchant-Reference-Cited by-同舟云学术

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Current Gain Reduction in Bipolar Junction Transistors Induced by Carbon Contamination from H₃PO₄-Based Etchant

Published:2023-05-01 Issue: Volume: Page:
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Container-title:2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
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Author:

Lik Tan Chan¹,Ning Lim Chui¹,Wai Wan Tatt²,Johan Norjuliani¹,Zakaria Zafirah¹,Cheong Kuan Yew³

Affiliation:

1. Infineon Technologies Sdn. Bhd.,Procss Integration,Kulim,Malaysia,09000

2. Infineon Technologies Sdn. Bhd.,Unit Process Development,Kulim,Malaysia,09000

3. University Science Malaysia,School of Materials & Mineral Resources Engineering, Engineering Campus,Nibong Tebal,Pulau Pinang,Malaysia,14300

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10121052/10121025/10121127.pdf?arnumber=10121127

Reference5 articles.

1. Carbon-Free Solution-Based Doping for Silicon

2. Understanding the Role of Concentrated Phosphoric Acid Solutions as High-Temperature Silicon Nitride Etchants

3. Deep level transient spectroscopic investigation of Phosphorus-doped silicon by self-assembled molecular monlayers;gao;Nature Communication,2018

4. The effect of H3PO4 processing on LDMOS gate oxide integrity in PolySilicon buffered LOCOS

5. Improve Hot phosphoric process robustness in 300mm nitride strip wet bench;calvier;IEEE International Symposium on Semiconductor Manufacturing,2005

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