A Novel Continuous Plasma Etch with Optimized Algorithms for Yield Improvement and High Production Throughput in NOR Memory
Author:
Affiliation:
1. Micron Technology Virginia,Manassas,VA,USA,20110
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10121052/10121025/10121134.pdf?arnumber=10121134
Reference3 articles.
1. Revisiting the mechanisms involved in line width roughness smoothing of 193nm photoresist patterns during HBr plasma treatment;brihoum;J Phys Chem,2013
2. HBr Plasma Treatment Versus VUV Light Treatment to Improve 193 nm Photoresist Pattern Linewidth Roughness
3. Continuous plasma etch process with waferless chamber clean optimization for defect reduction by eliminating center injector shading
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