Electrically erasable nonvolatile optical MNOS memory device-Reference-Cited by-同舟云学术

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Electrically erasable nonvolatile optical MNOS memory device

Published:1976-04 Issue:2 Volume:11 Page:303-307
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Koike S.,Kambara G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/22547/01050718.pdf?arnumber=1050718

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10nm SiO2–HfO2 stacks and Au nanocrystals;Microelectronic Engineering;2011-06

2. Optical properties of nonvolatile memory capacitors based on gold nanoparticles and SiO2–HfO2 sublayers;Applied Physics Letters;2011-01-10

3. Analysis of optical writing mode in solid-state imaging devices with inherent MNOS memory;IEE Proceedings I Solid State and Electron Devices;1986

4. Novel solid-state imaging devices with inherent MNOS memory gate;IEEE Transactions on Electron Devices;1985-04

5. Dangling Bonds in Memory‐Quality Silicon Nitride Films;Journal of The Electrochemical Society;1985-02-01

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