A high-speed P-channel random access 1024-bit memory made with electron lithography-Reference-Cited by-同舟云学术

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A high-speed P-channel random access 1024-bit memory made with electron lithography

Published:1975-04 Issue:2 Volume:10 Page:92-96
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Henderson R.C.,Pease R.F.,Voshchenkov A.M.,Helm R.F.,Wadsack R.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/22541/01050567.pdf?arnumber=1050567

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Transport in refractory metals and their interaction with SiO2: Comparison of tungsten and molybdenum;Thin Solid Films;1987-10

3. Self-aligned silicides or metals for very large scale integrated circuit applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-11

4. Effects of deposition methods on the temperature‐dependent resistivity of tungsten films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1986-11

5. Silicides for VLSI interconnects;Vacuum;1985-10

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