A 1-mil/SUP 2/ single-transistor memory cell in n silicon-gate technology-Reference-Cited by-同舟云学术

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A 1-mil/SUP 2/ single-transistor memory cell in n silicon-gate technology

Published:1973-10 Issue:5 Volume:8 Page:319-323
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Stein K.U.,Friedrich H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/22532/01050410.pdf?arnumber=1050410

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Wirtschaftswunderin Pretzfeld, upper Franconia: Interactions between science, technology, and corporate strategies in Siemens semiconductor rectifier research & development, 1945–1956;History and Technology;2000-01

3. Structures and Fabrication of Metal-Oxide-Silicon Field-Effect Transistor;Handbook of Advanced Semiconductor Technology and Computer Systems;1988

4. Einleitung;Halbleiter-Elektronik;1988

5. Half-V/SUB DD/ bit-line sensing scheme in CMOS DRAMs;IEEE Journal of Solid-State Circuits;1984-08

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