Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures-Reference-Cited by-同舟云学术

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Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures

Published:2021-10-13 Issue: Volume: Page:
ISSN:
Container-title:IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society
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Author:

Mehrabankhomartash Mahmoud,Yin Shiyuan,Cruz Alfonso J,Graber Lukas,Saeedifard Maryam,Evans Simon,Kapaun Florian,Revel Ivan,Steiner Gerhard,Ybanez Ludovic,Park Chanyeop

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9588332/9589036/09589665.pdf?arnumber=9589665

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of semiconductor devices and other power electronics components at cryogenic temperature;iEnergy;2024-06

2. Fully Automated Wide Temperature Range Semiconductor Characterization;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

3. Design and Implementation of Automated Characterization of T-type based Power Module for PV Inverter Reliability Assessment;2022 IEEE Energy Conversion Congress and Exposition (ECCE);2022-10-09

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