Displacement Damage Effects Mitigation Approach for Heterojunction Bipolar Transistor Frequency Synthesizers-Reference-Cited by-同舟云学术

Displacement Damage Effects Mitigation Approach for Heterojunction Bipolar Transistor Frequency Synthesizers

Published:2020-11 Issue:11 Volume:67 Page:2396-2404
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Sotskov Denis I.^ORCID,Elesin Vadim V.,Kuznetsov Alexander G.,Zhidkov Nikita M.,Metelkin Igor O.^ORCID,Amburkin Konstantin M.,Amburkin Dmitry M.^ORCID,Usachev Nikolay A.,Boychenko Dmitry V.,Elesina Varvara V.

Funder

Ministry of Education and Science of the Russian Federation and National Research Nuclear University MEPhI

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9263037/09165210.pdf?arnumber=9165210

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