A new approach to the simulation of the coupled point defects and impurity diffusion-Reference-Cited by-同舟云学术

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A new approach to the simulation of the coupled point defects and impurity diffusion

Published:1990 Issue:10 Volume:9 Page:1113-1122
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Rorris E.,O'Brien R.R.,Morehead F.F.,Lever R.F.,Peng J.P.,Srinivasan G.R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx1/43/2287/00062735.pdf?arnumber=62735

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dopant Diffusion;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

2. A model of reduction of oxidation-enhanced diffusion in heavily doped Si layers;Semiconductors;2003-06

3. Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon;Semiconductor Science and Technology;2003-01-02

4. Modeling of diffusion and oxidation in two dimensions during silicon device processing;Bulletin of Materials Science;1999-05

5. Modelling of argon-implantation-induced boron redistribution in silicon;Modelling and Simulation in Materials Science and Engineering;1996-03-01

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