Impact of Dielectric Pocket on the Performance of Double Gate TFET-Reference-Cited by-同舟云学术

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Impact of Dielectric Pocket on the Performance of Double Gate TFET

Published:2020-02 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Calcutta Conference (CALCON)
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Author:

Debnath Radhe Gobinda,Baishya Srimanta

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9104468/9106416/09106505.pdf?arnumber=9106505

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and sensitivity analysis of a vertical TFET with dielectric pocket for its use as label free biosensor;Engineering Research Express;2024-07-24

2. SiGe Source-Based Epitaxial Layer-Encapsulated TFET and its Application as a Resistive Load Inverter;Nanoelectronic Devices and Applications;2024-06-26

3. Ambipolarity Suppression of a Double Gate Tunnel FET using High-k Drain Dielectric Pocket;ECS Journal of Solid State Science and Technology;2022-01-01

4. Effect of dielectric pocket for controlling ambipolar conduction in TFET and analysis of noise and temperature sensitivity;Indian Journal of Physics;2021-03-14

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