A 1.05 V 1.6 mW, 0.45 $^{\circ}$C 3$\sigma$ Resolution $\Sigma\Delta$ Based Temperature Sensor With Parasitic Resistance Compensation in 32 nm Digital CMOS Process-Reference-Cited by-同舟云学术

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A 1.05 V 1.6 mW, 0.45 $^{\circ}$C 3$\sigma$ Resolution $\Sigma\Delta$ Based Temperature Sensor With Parasitic Resistance Compensation in 32 nm Digital CMOS Process

Published:2009-12 Issue:12 Volume:44 Page:3621-3630
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Lakdawala Hasnain,Li Y. William,Raychowdhury Arijit,Taylor Greg,Soumyanath Krishnamurthy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/5342337/05342342.pdf?arnumber=5342342

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