The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks-Reference-Cited by-同舟云学术

The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks

Published:2006-08 Issue:8 Volume:41 Page:1830-1845
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Dickson T.O.,Yau K.H.K.,Chalvatzis T.,Mangan A.M.,Laskin E.,Beerkens R.,Westergaard P.,Tazlauanu M.,Yang M.-T.,Voinigescu S.P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/34772/01661759.pdf?arnumber=1661759

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