Design of Charge Pump Circuit With Consideration of Gate-Oxide Reliability in Low-Voltage CMOS Processes-Reference-Cited by-同舟云学术

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Design of Charge Pump Circuit With Consideration of Gate-Oxide Reliability in Low-Voltage CMOS Processes

Published:2006-05 Issue:5 Volume:41 Page:1100-1107
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Ker M.-D.,Chen S.-L.,Tsai C.-S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/34101/01624399.pdf?arnumber=1624399

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