Simulation study on control characteristics of semiconductor grade monocrystalline silicon growth process

Author:

Liu Yuyu1,Liu Ding1,Song Zezhong1

Affiliation:

1. Xiàn University of Technology,Local Joint Engineering Research Center of Crystal Growth Equipment and System Integration,Xiàn,China,710048

Publisher

IEEE

Reference17 articles.

1. Research on the dynamic stability and instability mechanism of the meniscus during the horizontal drawing of silicon wafers[J];jiang;Solar Energy in China,2019

2. Crystal Growth Processes Based on Capillarity (Czochralski, Floating Zone, Shaping and Crucible Techniques);duffar;Vertical Bridgman Technique and Dewetting [J],2010

3. Capillary phenomena

4. Shape and stability of Menisci in czochralski growth and comparison with analytical approximations

5. Physically-based, lumpedparameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals[J];wang;Journal of Crystal Growth,2021

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1. Modeling and Simulation Design of Single Crystal Silicon Growth by Czochralski Method;2024 5th International Conference on Mechatronics Technology and Intelligent Manufacturing (ICMTIM);2024-04-26

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