Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

Author:

Chen MengxingORCID,Wang HuaiORCID,Pan DonghuaORCID,Wang XiongfeiORCID,Blaabjerg FredeORCID

Funder

Innovationsfonden

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications;IEEE Transactions on Power Electronics;2024-09

2. Thermal Analysis of Packaging Solution for GaN Multi-Chip Power Micromodule;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

3. Temperature Reduction Method Using Model Predictive Control with Space Vector Modulation in SiC Inverter-Fed Motor Drive Systems;2024 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM);2024-06-19

4. A Neural Network Modeling Method With Low-Rate Sampling for Wide Temperature Range SiC MOSFETs Application;IEEE Transactions on Electron Devices;2024-06

5. A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects;IEEE Transactions on Power Electronics;2024-05

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