Shielding of backgating effects in GaAs integrated circuits
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/31938/01485238.pdf?arnumber=1485238
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of the undoped spacer layer thickness on the DC characteristics of n-type GaAs/AlAs MESFETs;Semiconductor Science and Technology;1998-03-01
2. Backgating reduction in MESFETs using an AlAs native oxide buffer layer;Electronics Letters;1996
3. Numerical simulation of the suppression of sidegating effects in GaAs MESFETs by ion bombardment;Solid-State Electronics;1993-10
4. Numerical simulation of sidegating effect in GaAs MESFET's;IEEE Transactions on Electron Devices;1993-04
5. A GaAs Junction-Gate FECFET(J-FECFET) for the Digital Integrated Circuits;Japanese Journal of Applied Physics;1993-01-30
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