Monte-Carlo simulation of the dynamic behavior of a CMOS inverter struck by a heavy ion-Reference-Cited by-同舟云学术

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Monte-Carlo simulation of the dynamic behavior of a CMOS inverter struck by a heavy ion

Published:1994-06 Issue:3 Volume:41 Page:619-624
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Brisset C.,Dollfus P.,Hesto P.,Musseau O.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/7419/00299809.pdf?arnumber=299809

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and Simulation of Single-Event Effects in Digital Devices and ICs;IEEE Transactions on Nuclear Science;2008-08

2. Charge collection in submicron CMOS/SOI technology;IEEE Transactions on Nuclear Science;1997-12

3. Device simulation of charge collection and single-event upset;IEEE Transactions on Nuclear Science;1996-04

4. Theoretical study of SEUs in 0.25-/spl mu/m fully-depleted CMOS/SOI technology;IEEE Transactions on Nuclear Science;1994-12

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