Effect of Sneak Path Current in TiOx/HfOx Based 1S1R RRAM Crossbar Memory Array-Reference-Cited by-同舟云学术

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Effect of Sneak Path Current in TiOx/HfOx Based 1S1R RRAM Crossbar Memory Array

Published:2021-11-23 Issue: Volume: Page:
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Container-title:2021 IEEE 19th Student Conference on Research and Development (SCOReD)
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Author:

Youssef Amr Nabil,Jagath Arya Lekshmi,Thulasiraman Nandha Kumar,Almurib Haider Abbas F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9652587/9652588/09652781.pdf?arnumber=9652781

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Group IVA Elements on the Electrical Response of a Ge2Se3-Based Optically Gated Transistor;Micromachines;2024-08-01

2. Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt;Materials;2024-04-17

3. Performance Improvement of AlN-Based RRAMs Using Ag Layer for Hardware Security Applications;IEEE Transactions on Electron Devices;2023-08

4. Essential Characteristics of Memristors for Neuromorphic Computing;Advanced Electronic Materials;2022-10-25

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