Behavior of Crystal Defects at Low Temperature in AlGaN/GaN HEMTs
Author:
Affiliation:
1. School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10322307/10322308/10322475.pdf?arnumber=10322475
Reference14 articles.
1. Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes
2. Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates
3. Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors
4. Current collapse scaling in GaN/AlGaN/SiC high electron mobility transistors
5. GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review
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