The Impact of Operation Conditions on Potentiation, Depression and Endurance Dynamics of Tantalum Oxide RRAMs
Author:
Affiliation:
1. Wayne State University,Electrical and Computer Engineering,Detroit,USA
Funder
University of Michigan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10477668/10477631/10477696.pdf?arnumber=10477696
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5. Role of defects in resistive switching dynamics of memristors
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