Gate Oxide Reliability Under ESD-Like Pulse Stress
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/29042/01308646.pdf?arnumber=1308646
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Novel Voltage Divider Trigger SCR With Low Leakage Current for Low-Voltage ESD Application;IEEE Transactions on Electron Devices;2022-05
2. Test Scheme and Degradation Model of Accumulated Electrostatic Discharge (ESD) Damage for Insulated Gate Bipolar Transistor (IGBT) Prognostics;IEEE Transactions on Device and Materials Reliability;2019-03
3. Temperature-dependent power-law model for submicron CMOS circuits EOS breakdown study;IEICE Electronics Express;2016
4. ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique;Microelectronics Reliability;2015-08
5. Breakdown voltage of ultrathin dielectric film subject to electrostatic discharge stress;Journal of Applied Physics;2011-09
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